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Temperature Dependence of Bond charge Vibration in Silicon by U. Pietsch; K. Unger is a Physics and Astronomy article available to read on EtoBox.
What is Temperature Dependence of Bond charge Vibration in Silicon about?
## Abstract With help of a bond charge model introduced in a previous paper the thermal motion of the silicon atoms and that of the bond charge (BC) is separated. This analysis is made with structure factor data from silicon of Aldret and Hart, measured at two temperatures. The observed temperature dependence of the BC is caused mainly by the larger vibration amplitudes of the BC's in comparison with that of the Si atoms. Experimentally, a change of the BC amount is not detectable. The mean square displacement of the BCs is 4.2 times larger than that of the silicon atoms for 92.2 and 293.2 K, respectively. This fact is explained on the basis of the changing amount of the BC in the vibrating lattice, which corresponds to the results of calculations by Maschke and Baldereschi.
Who reads Temperature Dependence of Bond charge Vibration in Silicon?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- U. Pietsch; K. Unger
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)
- Published
- 1980
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)