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About this Engineering article
Resonant Tunneling Devices with Multiple Negative Differential Resistance and Demonstration of a Three-state Memory Cell for Multiple-valued Logic Applications by Capasso, F.; Sen, S.; Cho, A.Y.; Sivco, D. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Capasso, F.; Sen, S.; Cho, A.Y.; Sivco, D.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 1987
- Field
- Engineering (Physical Sciences)
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