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Silicon VLSI Technology Fundamentals by Yosua Siregar is a document available to read on EtoBox.

1) The Deal-Grove model describes silicon dioxide growth through diffusion and reaction processes. It models oxide growth rate as proportional to the difference between oxidant concentrations at the Si/SiO2 interface and in the bulk oxide. 2) Stress occurs in grown silicon dioxide due to the large difference in thermal expansion coefficients between silicon and silicon dioxide. Various charges can also form at the silicon dioxide/silicon interface or in the bulk oxide. 3) The Deal-Grove model is generall

Author

Yosua Siregar

Language

EN