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About this Materials Science article
Electrical Properties of Lateral P–n Junction Diodes Fabricated by Selective Growth of N+ Diamond by Hoshino, Yuto ;Kato, Hiromitsu ;Makino, Toshiharu ;Ogura, Masahiko ;Iwasaki, Takayuki ;Hatano, Mutsuko ;Yamasaki, Satoshi is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Hoshino, Yuto ;Kato, Hiromitsu ;Makino, Toshiharu ;Ogura, Masahiko ;Iwasaki, Takayuki ;Hatano, Mutsuko ;Yamasaki, Satoshi
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)
- Published
- 2012
- Field
- Materials Science (Physical Sciences)