About this scholarly article

2014 IEEE International Reliability Physics Symposium - Novel area-efficient techniques for improving ESD performance of Drain extended transistors by Appaswamy, Aravind; Farbiz, Farzan; Salman, Akram is a scholarly article available to read on EtoBox.

Author

Appaswamy, Aravind; Farbiz, Farzan; Salman, Akram

Publisher

IEEE

Published

2014

Language

EN