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Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications by Roccaforte, Fabrizio; Leszczynski, Mike is a scholarly article available to read on EtoBox.

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Introduction to Gallium Nitride Properties and Applications / Fabrizio Roccaforte, Mike Leszczynski -- GaN-Based Materials / Ferdinand Scholz, Michal Bockowski, Ewa Grzanka -- GaN-Based HEMTs for Millimeter-wave Applications / Kathia Harrouche, Farid Medjdoub -- Technologies for Normally-off GaN HEMTs / Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Fabrizio Roccaforte -- Vertical GaN Power Devices / Srabanti Chowdhury, Dong Ji -- Reliability Issues in GaN Electronic Devices / Milan Tapajna, Christian Koller -- Light-Emitting Diodes / Amit Yadav, Hideki Hirayama, Edik U Rafailov -- Laser Diodes Grown by Molecular Beam Epitaxy / Greg Muziol, Henryk Turski, Marcin Siekacz, Marta Sawicka, Czeslaw Skierbiszewski -- Edge Emitting Laser Diodes and Superluminescent Diodes / Szymon Stanczyk, Anna Kafar, Dario Schiavon, Stephen Najda, Thomas Slight, Piotr Perlin -- Green and Blue Vertical-Cavity Surface-Emitting Lasers / Yang Mei, Rong-Bin Xu, Huan Xu, Bao-Ping Zhang -- Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications / Filippo Giannazzo, Emanuela Schiliro, Raffaella Lo Nigro, Pawel Prystawko, Yvon Cordier

Author
Roccaforte, Fabrizio; Leszczynski, Mike
Publisher
Wiley & Sons, Incorporated, John
Published
2020
Language
EN
ISBN
9783527825264

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