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Negative characteristic temperature of InGaN blue multiple-quantum-well laser diodes by H. Y. Ryu; K. H. Ha; S. N. Lee; T. Jang; H. K. Kim; J. K. Son; J. H. Chae; K. S. Kim; K. K. Choi; H. S. Paek; Y. J. Sung; T. Sakong; O. H. Nam; Y. J. Park is a Engineering article available to read on EtoBox.
What is Negative characteristic temperature of InGaN blue multiple-quantum-well laser diodes about?
## Abstract We report anomalous temperature characteristics of InGaN laser diodes (LDs) emitting around 450 nm. Our blue LD shows negative characteristic temperature in the usual operation temperature range from 20 °C to 80 °C. This peculiar temperature characteristic is attributed to originate from unique carrier transport properties of InGaN quantum wells with high In composition, as deduced from the simulation of carrier density and optical gain. In addition, it is found that wall plug efficiency of the blue LD is even improved as temperature increases. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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- Author
- H. Y. Ryu; K. H. Ha; S. N. Lee; T. Jang; H. K. Kim; J. K. Son; J. H. Chae; K. S. Kim; K. K. Choi; H. S. Paek; Y. J. Sung; T. Sakong; O. H. Nam; Y. J. Park
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)