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About this Engineering article
In-situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement by Pu, Shi; Ugur, Enes; Yang, Fei; Wang, Gangyao; Akin, Bilal is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Pu, Shi; Ugur, Enes; Yang, Fei; Wang, Gangyao; Akin, Bilal
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electoronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 1932-4529)
- Published
- 2019
- Language
- EN
- Field
- Engineering (Physical Sciences)