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About this Engineering article
A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator by E. Sano is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- E. Sano
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2003
- Language
- EN
- Field
- Engineering (Physical Sciences)