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Low-Temperature MOS Capacitor Study by mar.aurel is a document available to read on EtoBox.

What is Low-Temperature MOS Capacitor Study about?

The document presents a study on the cryogenic performance of ultrathin oxide MOS capacitors using in situ doped p+ poly-Si1−xGex and poly-Si gate materials, focusing on their low-temperature electrical characteristics. It highlights significant changes in flat band voltage and capacitance behavior at low temperatures, revealing unique phenomena such as multiple zero-temperature coefficients. The findings suggest that the temperature dependence of tunneling current is primarily influenced by oxide thickness

Author
mar.aurel
Language
EN