Can I read Damage in thin SiO2–Si structures induced by RIE-mode nitrogen and oxygen plasma on EtoBox?

Damage in thin SiO2–Si structures induced by RIE-mode nitrogen and oxygen plasma by A Paskaleva; E Atanassova is a Engineering article available to read on EtoBox.

What is Damage in thin SiO2–Si structures induced by RIE-mode nitrogen and oxygen plasma about?

AbstractÐThe damage induced in thin SiO 2 ±Si systems after an exposure to O 2 and N 2 plasma working in reactive ion etching (RIE) mode has been studied by means of C±V and I±V techniques including gate oxide breakdown. A generation of large density of positive oxide charge (in bulk traps as well as in slow states) even during the ®rst 15 s of the exposure has been established and for this exposure time the dependence on the remaining plasma conditions is found to be weak. The RIE damage eects become highly process dependent as the plasma time increases Ð the ®xed oxide charge ®rst increases and then slows down or even turns around depending on discharge conditions. It is suggested that the relative contribution of the two main plasma components (ion bombardment and vacuum UV photons) at dierent discharge regimes is the reason for the appearance or the absence of the ``turn-around'' eect and the damage level is determined by the plasma conditions rather than by the type of oxidation (dry or wet). The damage leads to an excess leakage current and degrades the breakdown ®eld. The results reveal that a strong linear correlation between leakage current and plasma created positive char

Who reads Damage in thin SiO2–Si structures induced by RIE-mode nitrogen and oxygen plasma?

Author

A Paskaleva; E Atanassova

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

1998

Language

EN

Field

Engineering (Physical Sciences)