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Enhanced Interband Tunneling in Two-dimensional Tunneling Transistors Through Anisotropic Energy Dispersion by Hengze Qu; Shiying Guo; Wenhan Zhou; Zhenhua Wu; Jiang Cao; Zhi Li; Haibo Zeng; Shengli Zhang is a Physics and Astronomy article available to read on EtoBox.

What is Enhanced Interband Tunneling in Two-dimensional Tunneling Transistors Through Anisotropic Energy Dispersion about?

The unsatisfactory transmission probability in tunneling junction is a major challenge that restricts the performance and scaling of next-generation nanodevices, such as the tunnel field-effect transistors (TFETs). Here, we propose a strategy utilizing anisotropic electronic structures to enhance the inter-band tunneling performance. In the tunneling process, the sharp energy dispersion in transport direction ensures a high transmission eigenvalue, and the weak transverse energy state can broaden the transverse tunneling window, thus strengthening the tunneling probability. Furthermore, our quantum transport simulations demonstrate that in two-dimensional (2D) group VA-VA TFETs, the stronger anisotropic band structures make 2D BiAs and arsenene exhibit high on-state current several times higher than other systems, and the relative larger bandgap of arsenene also gives rise to a steep subthreshold slope below 60 mV/dec. This work provides a physical understanding of the tunneling transport performance, and the anisotropic 2D electronic structures can be regarded as a target feature to design tunneling transistors.

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Author

Hengze Qu; Shiying Guo; Wenhan Zhou; Zhenhua Wu; Jiang Cao; Zhi Li; Haibo Zeng; Shengli Zhang

Publisher

American Physical Society (APS)

Published

2022

Language

EN

Field

Physics and Astronomy (Physical Sciences)