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About this Engineering article
Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study by L. Harmatha; M. Ťapajna; V. Slugeň; P. Ballo; P. Písečný; J. Šik; G. Kögel is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- L. Harmatha; M. Ťapajna; V. Slugeň; P. Ballo; P. Písečný; J. Šik; G. Kögel
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0026-2692)
- Published
- 2006
- Language
- EN
- Field
- Engineering (Physical Sciences)
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