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About this Engineering article
Trigger voltage walk-out phenomenon in SOI lateral insulated gate bipolar transistor under repetitive electrostatic discharge stresses by Zhang, Shifeng; Han, Yan; Ma, Fei is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Zhang, Shifeng; Han, Yan; Ma, Fei
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2016
- Field
- Engineering (Physical Sciences)