Opening book details…
About this scholarly article
2009 Device Research Conference - InSb nanowire field-effect transistors — Electrical characterization and material analysis by Candebat, D.; Zhao, Y.; Sandow, C.; Koshel, B.; Yang, C.; Appenzeller, J. is a scholarly article available to read on EtoBox.
- Author
- Candebat, D.; Zhao, Y.; Sandow, C.; Koshel, B.; Yang, C.; Appenzeller, J.
- Publisher
- IEEE
- Published
- 2009
- Language
- EN
More by Candebat, D.; Zhao, Y.; Sandow, C.; Koshel, B.; Yang, C.; Appenzeller, J.
Browse all works by Candebat, D.; Zhao, Y.; Sandow, C.; Koshel, B.; Yang, C.; Appenzeller, J.