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Homo-epitaxial growth of LiNbO3 thin films by Pulsed Laser deposition by Laura C. Sauze; Nicolas Vaxelaire; Roselyne Templier; Denis Rouchon; François Pierre; Cyril Guedj; Denis Remiens; Guillaume Rodriguez; Marie Bousquet; Florian Dupont is a Engineering article available to read on EtoBox.

What is Homo-epitaxial growth of LiNbO3 thin films by Pulsed Laser deposition about?

With the deployment of the 5th Generation of mobile applications (5G), the performances of radio-frequency (RF) filters are pushed to their limits. Highly crystalline piezoelectric materials with an electromechanical coupling coefficient higher than aluminium nitride are of high interest. Lithium niobate (LiNbO3), with an electromechanical coupling coefficient from 5 % to 45 % for bulk waves, appears to be a promising candidate for a next generation of RF filters. However, despite decades of research, the growth of single-phased, stoichiometric and highly crystalline LiNbO3 thin films is still very challenging. In the present work, 200 nm-thick LiNbO3 films have been grown by pulsed laser deposition on congruent LiNbO3 substrates with various crystalline orientations: X-cut (i.e. (110)), Y-cut (i.e. (100)) and Z-cut (i.e. (001)). The influence of the substrate’s crystal cut on the physical and chemical properties of the LiNbO3 films is investigated. A High-Resolution X-ray Diffraction methodology is developed to characterize the crystalline properties of the homoepitaxial layers. In all cases, single-phased and epitaxial LiNbO3 thin films are obtained. These results indicate that a

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Author

Laura C. Sauze; Nicolas Vaxelaire; Roselyne Templier; Denis Rouchon; François Pierre; Cyril Guedj; Denis Remiens; Guillaume Rodriguez; Marie Bousquet; Florian Dupont

Publisher

Elsevier BV

Published

2023

Language

EN

Field

Engineering (Physical Sciences)