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Electrochemical Metal Deposition on Atomically Nearly-flat Silicon Surfaces Accompanied by Nano-hole Formation by Kazuhiko Morisawa; Masaki Ishida; Shinji Yae; Yoshihiro Nakato is a Engineering article available to read on EtoBox.

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A number of nanometer-sized holes, 20±80 nm wide and 0.6±0.7 nm deep, were produced at NH 4 F-etched, atomically nearly- ̄at n-Si(111) surfaces while platinum was electrochemically deposited at À0.40 V vs SCE in 5.0 Â 10 À3 M H 2 PtCl 6 +0.5 M Na 2 SO 4 of pH 2.9. The nano-holes were produced only during the Pt deposition at potentials more negative than À0.35 V. Experiments have shown that hole injection (or extraction of valence-band electrons) by H 2 PtCl 6 plays no important role in the nano-hole formation. When the n-Si(111) surfaces were kept at À0.4 V in 0.18 M H 2 SO 4 which has the same pH as the 5.0 Â 10 À3 M H 2 PtCl 6 +0.5 M Na 2 SO 4 , much smaller nanoholes than the above case were produced, suggesting that electrochemical reductive dissolution of Si occurs in acidic solutions. It is proposed as a possible mechanism that deposited Pt atoms, while migrating along the n-Si surface, act as a catalyst for the reductive dissolution of Si, leading to acceleration of nano-hole formation.

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Author

Kazuhiko Morisawa; Masaki Ishida; Shinji Yae; Yoshihiro Nakato

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0013-4686)

Published

1999

Language

EN

Field

Engineering (Physical Sciences)