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This paper reviews spin-transfer torque magnetic random access memory (STT-MRAM) technologies. It discusses the fundamentals and key experimental breakthroughs of STT-MRAM. It then covers the state-of-the-art in STT-MRAM device designs and challenges, including bit-cell designs and cache architectures suitable for on-chip applications. The high write energy of STT-MRAM poses challenges, and alternative technologies like spin-orbit torque and voltage-controlled magnetic anisotropy may help reduce write energ

Author

Scott Backster Clarck

Language

EN