Opening book details…
About this Engineering article
GaAs-AlxGa1−xAs buried-heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge-doped) liquid phase epitaxy overgrown layer for current injection confinement by Tsang, W. T.; Logan, R. A. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Tsang, W. T.; Logan, R. A.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1980
- Language
- EN
- Field
- Engineering (Physical Sciences)