About this scholarly article

2007 International Workshop on Physics of Semiconductor Devices - RF performance of process-induced strain-engineered n-MOSFETs by Maiti, T. K.; Mahato, S. S.; Chakraborty, P.; Sarkar, S. K.; Maiti, C. K. is a scholarly article available to read on EtoBox.

Author

Maiti, T. K.; Mahato, S. S.; Chakraborty, P.; Sarkar, S. K.; Maiti, C. K.

Publisher

IEEE

Published

2007