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Interface electrical properties of Fe~3~O~4~/MgO/GaAs(100) epitaxial spin contacts by Ping Kwan Johnny Wong; Wen Zhang; Yongbing Xu is a Materials Science article available to read on EtoBox.

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## Abstract We have successfully accomplished the growth and fabrication of two types of molecular‐beam epitaxy‐grown Fe~3~O~4~‐based spin contacts on GaAs(100): (i) Fe~3~O~4~/GaAs direct contact, and (ii) Fe~3~O~4~/MgO/GaAs tunnel junction, both of which can be potentially used for electrical spin injection and detection at room temperature. Using current–voltage (__I–V__) measurements, we show, for the first time, the very different interface electrical properties of those epitaxial spin contacts on GaAs(100) surfaces. A more symmetric __I–V__ relationship has been revealed in Fe~3~O~4~/MgO/GaAs(100) tunnel junctions, meaning that thermionic emission, which is important in epitaxial Fe~3~O~4~/GaAs(100) no longer plays a dominant role and that electron tunneling across the MgO tunnel barrier takes over the electronic transport characteristics. Moreover, by manipulating the MgO layer thickness (0.5 to 3.0 nm), the contact resistance of the tunnel junctions, a prerequisite parameter determining the efficiency of spin injection and detection into GaAs, can be tuned over three orders of magnitude.

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Author

Ping Kwan Johnny Wong; Wen Zhang; Yongbing Xu

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)

Published

2011

Language

EN

Field

Materials Science (Physical Sciences)