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Study and characterization of the structures Au/Al2O3/Si and Au/Al0/Al2O3/Si by B. Gruzza; B. Akkal; L. Bideux; Z. Benamara; C. Robert is a Engineering article available to read on EtoBox.

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The performances of the metal/insulator/semiconductor structures are conditioned by the quality of insulator and the control of the physico-chemical properties of the insulator/semiconductor and metal/insulator interfaces. Within the framework of development of the MIS structures on a silicon substrate, we carried out deposits of gold on two types of surfaces (alumina or aluminum/alumina). The combination of the Auger electrons spectroscopy, elastic peak electron spectroscopy and the electrical measurements shows that the results of electric properties are much better when the deposition of gold is made on surfaces of aluminum/alumina. The interfacial state density N ss in the mid-gap evaluated for the structures Au/Al 2 O 3 /Si and Au/Al 0 /Al 2 O 3 /Si are about 10 12 and 5.2 Â 10 11 eV À1 cm À2 , respectively. From these measurements, we noted that the structures Au/Al 2 O 3 /Si present a flat band voltage V FB of about 8.15 V, which indicates the presence of charges in insulator and in the insulator/semiconductor interface of about 1.92 Â 10 12 charges per cm 2 .

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Author

B. Gruzza; B. Akkal; L. Bideux; Z. Benamara; C. Robert

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)

Published

2002

Language

EN

Field

Engineering (Physical Sciences)