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Potential Distribution at the Semiconductor Thin Film/electrolyte Interface with High Density of Grain Boundaries by Carlos Alcober; Sara A Bilmes is a Engineering article available to read on EtoBox.
What is Potential Distribution at the Semiconductor Thin Film/electrolyte Interface with High Density of Grain Boundaries about?
The electronic structure of an n-CdSyelectrolyte interface was analyzed by in situ surface conductance for CdS thin films obtained by chemical precipitation onto a conducting substrate. The films are compact, composed of crystallites and exhibit grain boundaries that affect the potential distribution on the semiconductor space charge layer. We propose an explicit evaluation of the charge carrier density, n , taking into account the relation between the space charge layer length, L , and the crystallite length, ## L SC L. Using this model, values of the interfacial and electronic parameters, such as the flat band potential, U , the carrier mobility, fb NmM, and the electron density, n , were obtained from in situ surface conductance data.
Who reads Potential Distribution at the Semiconductor Thin Film/electrolyte Interface with High Density of Grain Boundaries?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Carlos Alcober; Sara A Bilmes
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)