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Catalyst-mediated Doping in Electrochemical Growth of Solar Silicon by Cho, Sung Ki; Lim, Taeho is a Engineering article available to read on EtoBox.

What is Catalyst-mediated Doping in Electrochemical Growth of Solar Silicon about?

The direct electrochemical reduction of silicon dioxide in molten CaCl 2 has been investigated as a promising candidate for alternative production process of solar silicon. Herein, we study a catalyst-mediated doping, which is carried out by introducing dopant precursors like Al 2 O 3 , In 2 O 3 , and Sb 2 O 3 into the molten CaCl 2 during the electrochemical growth of silicon on Ag catalyst. The photoelectrochemical measurement demonstrates controllable p -type or n -type doping, and the photoresponse of doped silicon reaches 1.1 ±0.4 mA/cm 2 under 100 mW/cm 2 irradiation. Doping densities, estimated from two-point micro-probe measurements and Mott-Schottky plot analyses range from 10 15 to 10 16 /cm 3 . Dopant is incorporated through Si-Ag catalyst droplet, which is supported by a high dopant content in Ag catalyst revealed by the elemental mapping of secondary ion mass spectroscopy. The catalyst-mediated doping mechanism is proposed to elucidate the doping level. The liquid droplet is presumed to be under local equilibrium along with significant loss of the dopant from it whereby the doping level becomes a function of the segregation coefficient and the rate constant of the elec

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Author

Cho, Sung Ki; Lim, Taeho

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0013-4686)

Published

2021

Language

EN

Field

Engineering (Physical Sciences)