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Thermal spreading resistance of GaN HEMTs with heat source heating studied by hybrid Monte Carlo-diffusion simulations by Li, Han-Ling; Shen, Yang; Hua, Yu-Chao; Sobolev, S. L.; Cao, Bing-Yang is a scholarly article available to read on EtoBox.

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Exact assessment of thermal spreading resistance is of great importance to the thermal management of electronic devices, especially when completely considering the heat conduction process from the nanoscale heat source to the macroscopic scale heat sink. The existing simulation methods are either based on convectional Fourier's law or limited to small system sizes, making it difficult to accurately and efficiently study the cross-scale heat transfer. In this paper, a hybrid phonon Monte Carlo-diffusion method that couples phonon Monte Carlo (MC) method with Fourier's law by dividing the computational domain is adopted to analyze thermal spreading resistance in ballistic-diffusive regime. Compared with phonon MC simulation, the junction temperature of the hybrid method has the same precision, while the time costs could be reduced up to 2 orders of magnitude at most. Furthermore, the simulation results indicate that the heating scheme has a remarkable impact on phonon transport. The thermal resistance of the heat source (HS) scheme can be larger than that of the heat flux (HF) scheme, which is opposite from the prediction of Fourier's law. In the HS scheme, the enhanced phonon-bounda

Author

Li, Han-Ling; Shen, Yang; Hua, Yu-Chao; Sobolev, S. L.; Cao, Bing-Yang

Published

2022

Language

EN