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About this Engineering article
Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy Using GeH4 by Y. Koide; S. Zaima; N. Ohshima; Y. Yasuda is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Y. Koide; S. Zaima; N. Ohshima; Y. Yasuda
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 1989
- Field
- Engineering (Physical Sciences)
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