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Can I read Progress of semiconductor silicon carbide (SiC) on EtoBox?
Progress of semiconductor silicon carbide (SiC) by Hiroyuki Matsunami is a Engineering article available to read on EtoBox.
What is Progress of semiconductor silicon carbide (SiC) about?
SiC has been advanced as the most likely candidate for electronic device applications of wide-gap semiconductors, since the substrate is available and conductivity control is easily carried out by impurity doping. This paper describes the principle of bulk single-crystal growth by a sublimation method, and then introduces the method and characteristics of step-controlled epitaxial growth that is suitable for high-grade 6H-and 4H-SiC layers grown on a substrate made by sublimation. The superior physical characteristics of the grown layer are described. In regard to the latest SiC devices using a high-quality grown layer, the present status is described for power devices such as highvoltage diodes, high-frequency transistors, high-voltage power transistors, and thyristors as well as high-temperature devices. Design guidelines and test results are discussed for a 4H-SiC high-voltage and high-speed Schottky diode, and its high performance is described.
Who reads Progress of semiconductor silicon carbide (SiC)?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hiroyuki Matsunami
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Scripta Technica; Wiley (ISSN 8756-663X)
- Published
- 1998
- Language
- EN
- Field
- Engineering (Physical Sciences)