About this document
Effective Transistor Gate Length Analysis by Marius Ferdy is a document available to read on EtoBox.
The document discusses modeling of MOS transistors including large-signal DC and small-signal AC models. It covers key topics such as effective channel length, finite output resistance in saturation due to channel length modulation, derivation of the ID equation accounting for channel length modulation, and definition of key small-signal parameters like transconductance and output conductance. It also discusses modeling of various MOS capacitor elements and the low-frequency small-signal model of a MOS tran
- Author
- Marius Ferdy
- Language
- EN