Opening book details…
About this Materials Science article
Device models for PZT/PT, BST/PT, SBT/PT, and SBT/BI ferroelectric memories by Scott, J. F.; Watanabe, K.; Hartmann, A. J.; Lamb, R. N. is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Scott, J. F.; Watanabe, K.; Hartmann, A. J.; Lamb, R. N.
- Publisher
- Taylor and Francis Group; Informa UK (Taylor & Francis); Gordon and Breach Science Publishers; Informa UK Limited (ISSN 0015-0193)
- Published
- 1999
- Field
- Materials Science (Physical Sciences)
More by Scott, J. F.; Watanabe, K.; Hartmann, A. J.; Lamb, R. N.
Browse all works by Scott, J. F.; Watanabe, K.; Hartmann, A. J.; Lamb, R. N.