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About this Engineering article
"Epitaxial growth of InP to bury directly bonded thin active layer on SiO by Takeda, Koji; Matsuo, Shinji; Fujii, Takuro; Hasebe, Koichi; Sato, Tomonari; Kakitsuka, Takaaki is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Takeda, Koji; Matsuo, Shinji; Fujii, Takuro; Hasebe, Koichi; Sato, Tomonari; Kakitsuka, Takaaki
- Publisher
- The Institution of Engineering and Technology; Institution of Electrical Engineers; Institution of Engineering and Technology; Institution of Engineering and Technology (IET) (ISSN 1751-8768)
- Published
- 2015
- Field
- Engineering (Physical Sciences)