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About this Engineering article
Investigation of drain current transient in BCB- and SiN-passivated Al[sub 0.25]Ga[sub 0.75]As∕In[sub 0.2]Ga[sub 0.8]As pseudomorphic high electron mobility transistors by Tan, Chee Leong; Wang, Hong; Radhakrishnan, K. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Tan, Chee Leong; Wang, Hong; Radhakrishnan, K.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)
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