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About this Engineering article
Device Simulation Model for Transient Analysis of SiC-SBD by Tomita, Masaaki; Maeyama, Yusuke; Sato, M.; Fukuda, Y.; Honma, F.; Ono, J.; Shimizu, Masaaki; Iwakuro, Hiroaki is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Tomita, Masaaki; Maeyama, Yusuke; Sato, M.; Fukuda, Y.; Honma, F.; Ono, J.; Shimizu, Masaaki; Iwakuro, Hiroaki
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)