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About this Engineering article
(Invited) Improved Operation Characteristics in Charge-Trapping Flash Memory Devices with Engineered Dielectric Stack and SiGe Channel by Ye, Z.-H.; Liu, L.-J.; Chang-Liao, K.-S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ye, Z.-H.; Liu, L.-J.; Chang-Liao, K.-S.
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 1938-6737)
- Published
- 2013
- Field
- Engineering (Physical Sciences)
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