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About this Engineering article
Polymer Field-effect Transistor Memory Based on a Ferroelectric Nylon Gate Insulator by Anwar, Saleem; Jeong, Beomjin; Abolhasani, Mohammad Mahdi; Zajaczkowski, Wojciech; Hassanpour Amiri, Morteza; Asadi, Kamal is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Anwar, Saleem; Jeong, Beomjin; Abolhasani, Mohammad Mahdi; Zajaczkowski, Wojciech; Hassanpour Amiri, Morteza; Asadi, Kamal
- Publisher
- The Royal Society of Chemistry; Royal Society of Chemistry; Royal Society of Chemistry (RSC) (ISSN 2050-7526)
- Published
- 2020
- Language
- EN
- Field
- Engineering (Physical Sciences)