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The document discusses Gunn diodes, which are semiconductor devices that generate microwave oscillations using the Gunn effect. A Gunn diode contains only an N-type semiconductor and utilizes domain formation and drift to exhibit negative differential resistance. This allows Gunn diodes to be used as oscillators in applications such as radar transmitters and microwave receivers. Key aspects covered include the construction, operating principles based on Ridley-Watkins-Hilsum theory, oscillation modes, and a

Author

sharmila

Language

EN