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About this Engineering article
Growth of fully doped Hg1−xCdxTe heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures by C. D. Maxey; C. L. Jones; N. E. Metcalfe; R. Catchpole; M. R. Houlton; A. M. White; N. T. Gordon; C. T. Elliott is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C. D. Maxey; C. L. Jones; N. E. Metcalfe; R. Catchpole; M. R. Houlton; A. M. White; N. T. Gordon; C. T. Elliott
- Publisher
- Springer US; Springer-Verlag; Springer New York LLC; Springer Science and Business Media LLC (ISSN 0361-5235)
- Published
- 1996
- Language
- EN
- Field
- Engineering (Physical Sciences)