About this document

Investigation of On-Wafer ESD Characteristics - HBM and TLP - of Lateral GaN-On-Si SBDs by luke19960522 is a document available to read on EtoBox.

This study investigates the ESD characteristics of lateral GaN-on-Si Schottky barrier diodes (SBDs) using HBM and TLP tests, revealing two-step breakdowns during forward testing. The first breakdown, marked by a significant increase in leakage current, indicates irreversible damage to the Schottky junction, while the second breakdown leads to catastrophic failure. The findings enhance the understanding of ESD reliability in GaN SBDs, which is crucial for their application in various electronic devices.

Author

luke19960522

Language

EN