About this scholarly article

2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO) - In-situ nanoscale characterization of annealing effect on TiN/Ti/HfOx/TiN Structure for Resistive Random Access Memory (ReRAM) by Shima, Hisashi; Akinaga, Hiro is a scholarly article available to read on EtoBox.

Author

Shima, Hisashi; Akinaga, Hiro

Publisher

IEEE

Published

2012

Language

EN