About this scholarly article

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time by Saino, K.; Horiba, S.; Uchiyama, S.; Takaishi, Y.; Takenaka, M.; Uchida, T.; Takada, Y.; Koyama, K.; Miyake, H.; Hu, C. is a scholarly article available to read on EtoBox.

Author

Saino, K.; Horiba, S.; Uchiyama, S.; Takaishi, Y.; Takenaka, M.; Uchida, T.; Takada, Y.; Koyama, K.; Miyake, H.; Hu, C.

Publisher

IEEE

Published

2000