About this Engineering article
Optimization of the active region of InGaN∕GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects by Grandusky, J. R.; Jamil, M.; Shahedipour-Sandvik, F.; DeLuca, J. A.; LeBoeuf, S. F.; Cao, X. A.; Arthur, S. D. is a Engineering article available to read on EtoBox.
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- Author
- Grandusky, J. R.; Jamil, M.; Shahedipour-Sandvik, F.; DeLuca, J. A.; LeBoeuf, S. F.; Cao, X. A.; Arthur, S. D.
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-211X)
- Published
- 2005
- Language
- EN
- Field
- Engineering (Physical Sciences)