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Can I read Monte Carlo simulation of conductance characteristics in SOI-MOSFET on EtoBox?
Monte Carlo simulation of conductance characteristics in SOI-MOSFET by S Araya; K Yamasaki; H Ueno; N Mori; C Hamaguchi; L.M Perron; A.L Lacaita is a Physics and Astronomy article available to read on EtoBox.
What is Monte Carlo simulation of conductance characteristics in SOI-MOSFET about?
Front-and back-channel drain-conductance characteristics of SOI-MOSFETs are calculated by performing a Monte Carlo simulation, and the calculated results are compared with the experimental results of Perron et al. (Proceedings of the ESSDERC '98, 1998, p. 284) in order to extract the roughness parameters of the two interfaces. E!ect of image charge in oxide layers in SOI structures is also discussed.
Who reads Monte Carlo simulation of conductance characteristics in SOI-MOSFET?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- S Araya; K Yamasaki; H Ueno; N Mori; C Hamaguchi; L.M Perron; A.L Lacaita
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0921-4526)
- Published
- 1999
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)