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About this Materials Science article
Growth Mechanism of Hexagonal GaN on AlAs-Pregrown GaAs(001) and {11n} Substrates by Funato, M. ;Fujita, Sz. ;Yamamoto, S. ;Kaisei, K. ;Shimogami, K. ;Fujita, Sg. is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Funato, M. ;Fujita, Sz. ;Yamamoto, S. ;Kaisei, K. ;Shimogami, K. ;Fujita, Sg.
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)
- Published
- 2001
- Field
- Materials Science (Physical Sciences)