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About this Engineering article
Electronic states at the interface of Ti–Si oxide on Si by C. C. Fulton; G. Lucovsky; R. J. Nemanich is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C. C. Fulton; G. Lucovsky; R. J. Nemanich
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-211X)
- Published
- 2002
- Field
- Engineering (Physical Sciences)
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