About this scholarly article

2014 IEEE International Electron Devices Meeting - Ultrathin (∼2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration by Zhao, Liang; Zizhen Jiang, ; Chen, Hong-Yu; Sohn, Joon; Okabe, Kye; Magyari-Kope, Blanka; Philip Wong, H.-S.; Nishi, Yoshio is a scholarly article available to read on EtoBox.

Author

Zhao, Liang; Zizhen Jiang, ; Chen, Hong-Yu; Sohn, Joon; Okabe, Kye; Magyari-Kope, Blanka; Philip Wong, H.-S.; Nishi, Yoshio

Publisher

IEEE

Published

2014