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About this Engineering article
Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba,Sr)TiO/sub 3/ thin-film capacitors for Gbit-scale DRAMs by Yamamichi, S.; Yamamichi, A.; Donggun Park; Tsu-Jae King; Chenming Hu is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Yamamichi, S.; Yamamichi, A.; Donggun Park; Tsu-Jae King; Chenming Hu
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1999
- Field
- Engineering (Physical Sciences)
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