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About this Engineering article
Typical applications of ion implanted layer as a diffusion source for MOS and bipolar devices: Janusz Krylow, Aleksander Bakowski and Krzysztofsaczuk Electron Technology 12 (4), 3 (1979) is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0026-2692)
- Published
- 1984
- Language
- EN
- Field
- Engineering (Physical Sciences)