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Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon by Nardo, Roberto Lo; Wolfowicz, Gary; Simmons, Stephanie; Tyryshkin, Alexei M.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Steger, Michael; Lyon, Stephen A.; Thewalt, Mike L. W.; Morton, John J. L. is a scholarly article available to read on EtoBox.

What is Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon about?

Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation ($T_1$) and coherence ($T_2$) times of Se$^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\sim 15$ K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se$^0$.

Author

Nardo, Roberto Lo; Wolfowicz, Gary; Simmons, Stephanie; Tyryshkin, Alexei M.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Steger, Michael; Lyon, Stephen A.; Thewalt, Mike L. W.; Morton, John J. L.

Published

2015

Language

EN