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AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy by Ajay Raman; Christophe A. Hurni; James S. Speck; Umesh K. Mishra is a Materials Science article available to read on EtoBox.

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## Abstract We demonstrate AlGaN/GaN heterojunction bipolar transistors (HBTs) by ammonia molecular beam epitaxy (NH~3~ MBE). The several benefits offered by NH~3~ MBE for the growth of GaN based vertical electronic devices are discussed. To obtain good ohmic contacts to the base layer, devices were fabricated with two different processes involving regrowths – regrown base contact (Wafer A) and regrown emitter (Wafer B). Devices on Wafers A and B had similar DC performance. Common emitter (CE) operation with a peak collector current density, __J__~C~ > 1 kA/cm^2^ was obtained from devices on both wafers. In CE operation, a current gain (__β__) of 1.5–3 is observed in devices on both wafers. High base resistance is found to limit the current gain in CE operation, by limiting the base‐emitter bias voltage in the active region of the device. Maximum __β__ values observed from Gummel plots at a fixed base‐collector (BC) bias of zero volts, are __β__ ∼ 15 at __J__~C~ = 0.88 kA/cm^2^ for Wafer A and __β__ ∼13.5 at __J__~C~ = 3 kA/cm^2^ for Wafer B. In devices on both wafers, variation is observed in the plots of __β versus I__~C~ (collector current) for devices with the same emitter dime

Who reads AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy?

Author

Ajay Raman; Christophe A. Hurni; James S. Speck; Umesh K. Mishra

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)

Published

2011

Language

EN

Field

Materials Science (Physical Sciences)