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Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperatures by Dou, Chunmeng; Lin, Dennis; Vais, Abhitosh; Ivanov, Tsvetan; Chen, Han-Ping; Martens, Koen; Kakushima, Kuniyuki; Iwai, Hiroshi; Taur, Yuan; Thean, Aaron; Groeseneken, Guido is a Engineering article available to read on EtoBox.

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Author
Dou, Chunmeng; Lin, Dennis; Vais, Abhitosh; Ivanov, Tsvetan; Chen, Han-Ping; Martens, Koen; Kakushima, Kuniyuki; Iwai, Hiroshi; Taur, Yuan; Thean, Aaron; Groeseneken, Guido
Publisher
Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
Published
2014
Language
EN
Field
Engineering (Physical Sciences)

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Browse all works by Dou, Chunmeng; Lin, Dennis; Vais, Abhitosh; Ivanov, Tsvetan; Chen, Han-Ping; Martens, Koen; Kakushima, Kuniyuki; Iwai, Hiroshi; Taur, Yuan; Thean, Aaron; Groeseneken, Guido