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This paper analyzes the impact of negative capacitance (NC) on germanium FinFET (GeFinFET) devices in the presence of fixed trap charges. It finds that positive trap charges enhance device performance, while negative trap charges degrade it, and optimizes ferroelectric properties to mitigate this degradation. The study demonstrates that NCGeFinFET exhibits significantly improved characteristics over traditional GeFinFETs, particularly in terms of threshold voltage and gain.

Author

Subarna Mondal

Language

EN